 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-75/SOT-416 package which is designed for low power surface mount applications. Features http://onsemi.com PNP SILICON BIAS RESISTOR TRANSISTORS PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) * * * * * * Pb-Free Packages are Available* Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC-75/SOT-416 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm, 7 inch/3000 Unit Tape & Reel PIN 1 BASE (INPUT) 3 2 1 MARKING DIAGRAM MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc SC-75/SOT-416 CASE 463 STYLE 1 x M xM = Specific Device Code = Date Code Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. THERMAL CHARACTERISTICS Rating Total Device Dissipation, FR-4 Board (Note 1) @ TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation, FR-4 Board (Note 2) @ TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 2) Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad. 2. FR-4 @ 1.0 x 1.0 Inch Pad. (c) Semiconductor Components Industries, LLC, 2004 Symbol PD Value 200 1.6 Unit mW mW/C C/W *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. RqJA PD 600 Preferred devices are recommended choices for future use and best overall value. 300 2.4 RqJA TJ, Tstg 400 -55 to +150 mW mW/C C/W C 1 July, 2004 - Rev. 4 Publication Order Number: DTA114EET1/D DTA114EET1 Series ORDERING INFORMATION AND RESISTOR VALUES Device DTA114EET1 DTA124EET1 DTA144EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA123EET1G DTA143EE DTA143EET1 DTA143EET1G DTA143ZET1 DTA124XET1 DTA124XET1G DTA123JET1 DTA115EET1 DTA144WET1 Marking 6A 6B 6C 6D 6E 6F 6H 6H 6J 6J 6J 6K 6L 6L 6M 6N 6P R1 (K) 10 22 47 10 10 4.7 2.2 2.2 4.7 4.7 4.7 4.7 22 22 2.2 100 47 R2 (K) 10 22 47 47 2.2 2.2 4.7 4.7 4.7 47 47 47 47 100 22 Package SC-75 SC-75 SC-75 SC-75 SC-75 SC-75 SC-75 SC-75 (Pb-Free) SC-75 SC-75 SC-75 (Pb-Free) SC-75 SC-75 SC-75 (Pb-Free) SC-75 SC-75 SC-75 Shipping 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) DTA114EET1 DTA124EET1 DTA144EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143EET1 DTA143ZET1 DTA124XET1 DTA123JET1 DTA115EET1 DTA144WET1 ICBO ICEO IEBO - - - - - - - - - - - - - - - 50 50 - - - - - - - - - - - - - - - - - 100 500 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 - - nAdc nAdc mAdc Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% V(BR)CBO V(BR)CEO Vdc Vdc http://onsemi.com 2 DTA114EET1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) DTA114EET1 DTA124EET1 DTA144EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143EET1 DTA143ZET1 DTA124XET1 DTA123JET1 DTA115EET1 DTA144WET1 hFE 35 60 80 80 160 160 8.0 15 80 80 80 80 80 - 60 100 140 140 250 250 15 27 140 130 140 150 140 - - - - - - - - - - - - - - 0.25 - Symbol Min Typ Max Unit Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) DTA123EET1 DTA114TET1/DTA143TET1 (IC = 10 mA, IB = 1 mA) DTA143ZET1/DTA124XET1 DTA143EET1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) DTA114EET1 DTA124EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143EET1 DTA143ZET1 DTA124XET1 DTA123JET1 DTA144EET1 DTA115EET1 DTA144WET1 VCE(sat) Vdc VOL - - - - - - - - - - - - - VOH 4.9 - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 - Vdc (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) DTA114TET1 DTA143TET1 DTA123EET1 DTA143EET1 Input Resistor DTA114EET1 DTA124EET1 DTA144EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143EET1 DTA143ZET1 DTA124XET1 DTA123JET1 DTA115EET1 DTA144WET1 DTA114EET1/DTA124EET1 DTA144EET1/DTA115EET1 DTA114YET1 DTA114TET1/DTA143TET1 DTA123EET1/DTA143EET1 DTA143ZET1 DTA124XET1 DTA123JET1 DTA144WET1 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 2.9 6.1 6.1 28.6 2.86 130 61.1 kW Resistor Ratio R1/R2 0.8 0.17 - 0.8 0.055 0.38 0.038 1.7 1.0 0.21 - 1.0 0.1 0.47 0.047 2.1 1.2 0.25 - 1.2 0.185 0.56 0.056 2.6 - http://onsemi.com 3 DTA114EET1 Series 250 PD , POWER DISSIPATION (MILLIWATTS) 200 150 100 50 0 -50 RqJA = 600C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 Figure 1. Derating Curve r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 Figure 2. Normalized Thermal Response http://onsemi.com 4 DTA114EET1 Series TYPICAL ELECTRICAL CHARACTERISTICS - DTA114EET1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = -25C 0.1 75C 25C TA = 75C 100 25C -25C 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 3. VCE(sat) versus IC Figure 4. DC Current Gain 4 f = 1 MHz lE = 0 V TA = 25C 100 75C 25C TA = -25C Cob , CAPACITANCE (pF) 3 IC, COLLECTOR CURRENT (mA) 10 1 2 0.1 1 0.01 0.001 0 1 2 VO = 5 V 6 7 3 4 5 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 5. Output Capacitance Figure 6. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 10 TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 7. Input Voltage versus Output Current http://onsemi.com 5 DTA114EET1 Series TYPICAL ELECTRICAL CHARACTERISTICS - DTA124EET1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V 1 TA = -25C 25C TA = 75C 100 25C -25C 75C 0.1 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 8. VCE(sat) versus IC Figure 9. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 100 75C 10 25C TA = -25C Cob , CAPACITANCE (pF) 3 1 2 0.1 1 0.01 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 VO = 5 V 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 10. Output Capacitance Figure 11. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 10 75C 25C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 12. Input Voltage versus Output Current http://onsemi.com 6 DTA114EET1 Series TYPICAL ELECTRICAL CHARACTERISTICS - DTA144EET1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) TA = 75C 25C 100 -25C TA = -25C 0.1 75C 25C 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 13. VCE(sat) versus IC Figure 14. DC Current Gain 1 0.8 Cob , CAPACITANCE (pF) 0.6 0.4 0.2 0 f = 1 MHz lE = 0 V TA = 25C 100 10 1 0.1 0.01 VO = 5 V 0 1 2 TA = 75C 25C -25C 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 IC, COLLECTOR CURRENT (mA) 0.001 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 Figure 15. Output Capacitance Figure 16. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 17. Input Voltage versus Output Current http://onsemi.com 7 DTA114EET1 Series TYPICAL ELECTRICAL CHARACTERISTICS - DTA114YET1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = -25C 25C 75C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 VCE = 10 V 25C -25C TA = 75C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 18. VCE(sat) versus IC Figure 19. DC Current Gain 4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C 100 TA = 75C IC, COLLECTOR CURRENT (mA) 25C -25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 20. Output Capacitance Figure 21. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 25C TA = -25C +12 V 75C 1 Typical Application for PNP BRTs LOAD 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 0.1 Figure 22. Input Voltage versus Output Current Figure 23. Inexpensive, Unregulated Current Source http://onsemi.com 8 DTA114EET1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- DTA115EET1 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) 1000 75C TA = -25C 25C 100 0.1 -25C 25C 75C 10 IC/IB = 10 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) 100 0.01 Figure 24. Maximum Collector Voltage versus Collector Current Figure 25. DC Current Gain 1.2 IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) 1.0 0.8 0.6 0.4 0.2 0 f = 1 MHz IE = 0 V TA = 25C 100 25C 10 TA = -25C 75C 1 VO = 5 V 0.1 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 Vin, INPUT VOLTAGE (VOLTS) Figure 26. Output Capacitance Figure 27. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) 25C 10 TA = -25C 1 75C 0 2 VO = 0.2 V 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 20 Figure 28. Input Voltage versus Output Current http://onsemi.com 9 DTA114EET1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- DTA144WET1 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) 1000 75C TA = -25C 25C TA = -25C 75C 0.1 100 25C IC/IB = 10 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) 100 0.01 Figure 29. Maximum Collector Voltage versus Collector Current Figure 30. DC Current Gain 1.4 Cob, CAPACITANCE (pF) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 100 75C 10 25C TA = -25C 1 0.1 0.01 VO = 5 V 0.001 0 1 2 3 4 5 6 7 8 9 10 11 Vin, INPUT VOLTAGE (VOLTS) Figure 31. Output Capacitance Figure 32. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 TA = -25C 75C 1 25C 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 33. Input Voltage versus Output Current http://onsemi.com 10 DTA114EET1 Series PACKAGE DIMENSIONS SC-75/SOT-416 CASE 463-01 ISSUE C -A- S 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D G H J K L S MILLIMETERS MIN MAX 0.70 0.90 1.40 1.80 0.60 0.90 0.15 0.30 1.00 BSC --- 0.10 0.10 0.25 1.45 1.75 0.10 0.20 0.50 BSC INCHES MIN MAX 0.028 0.035 0.055 0.071 0.024 0.035 0.006 0.012 0.039 BSC --- 0.004 0.004 0.010 0.057 0.069 0.004 0.008 0.020 BSC G -B- 1 D 3 PL 0.20 (0.008) M B K 0.20 (0.008) A J C L H STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.53 0.020 0.53 0.020 1.10 0.043 0.50 0.020 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 11 DTA114EET1 Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 12 DTA114EET1/D |
Price & Availability of DTA115EET1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |